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| PD- 95352 IRFL014NPBF l l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free HEXFET(R) Power MOSFET D VDSS = 55V RDS(on) = 0.16 G S ID = 1.9A Description Fifth Generation HEXFET(R) MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET(R) power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infrared, or wave soldering techniques. Its unique package design allows for easy automatic pickand-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. SOT-223 Absolute Maximum Ratings Parameter ID @ TA = 25C ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 25C VGS EAS IAR EAR dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V** Continuous Drain Current, VGS @ 10V* Continuous Drain Current, VGS @ 10V* Pulsed Drain Current Power Dissipation (PCB Mount)** Power Dissipation (PCB Mount)* Linear Derating Factor (PCB Mount)* Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy* Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 2.7 1.9 1.5 15 2.1 1.0 8.3 20 48 1.7 0.1 5.0 -55 to + 150 Units A W W mW/C V mJ A mJ V/ns C Thermal Resistance Parameter RJA RJA Junction-to-Amb. (PCB Mount, steady state)* Junction-to-Amb. (PCB Mount, steady state)** Typ. 90 50 Max. 120 60 Units C/W * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. www.irf.com 1 06/07/04 IRFL014NPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 55 --- --- 2.0 1.6 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.054 --- --- --- --- --- --- --- 7.0 1.2 3.3 6.6 7.1 12 3.3 190 72 33 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.16 VGS = 10V, ID = 1.9A 4.0 V VDS = VGS, ID = 250A --- S VDS = 25V, ID = 0.85A 1.0 VDS = 44V, VGS = 0V A 25 VDS = 44V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 11 ID = 1.7A 1.8 nC VDS = 44V 5.0 VGS = 10V, See Fig. 6 and 13 --- VDD = 28V --- ID = 1.7A ns --- RG = 6.0 --- RD = 16, See Fig. 10 --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- 41 64 1.3 A 15 1.0 61 95 V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 1.7A, VGS = 0V TJ = 25C, I F = 1.7A di/dt = 100A/s Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 1.7A, di/dt 250A/s, VDD V(BR)DSS, TJ 150C VDD = 25V, starting TJ = 25C, L = 8.2mH RG = 25, IAS = 3.4A. (See Figure 12) Pulse width 300s; duty cycle 2%. 2 www.irf.com IRFL014NPBF 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 10 1 1 4.5V 4.5V 20s PULSE WIDTH TC = 25C 0.1 1 10 0.1 A 100 0.1 0.1 20s PULSE WIDTH TJ = 150C 1 10 100 A VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 2.0 R DS(on) , Drain-to-Source On Resistance (Normalized) I D = 1.7A I D , Drain-to-Source Current (A) 1.5 10 TJ = 150C TJ = 25C 1 1.0 0.5 0.1 4 5 6 V DS = 25V 20s PULSE WIDTH 7 8 9 A 0.0 -60 -40 -20 0 20 40 60 80 VGS = 10V 100 120 140 160 A VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFL014NPBF 350 300 C, Capacitance (pF) 250 Ciss Coss 200 150 V GS , Gate-to-Source Voltage (V) V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd 20 I D = 1.7A V DS = 44V V DS = 28V V DS = 11V 16 12 8 100 Crss 4 50 0 1 10 100 A 0 0 2 4 FOR TEST CIRCUIT SEE FIGURE 9 6 8 10 A VDS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) 10 I D , Drain Current (A) 10 100s TJ = 150C TJ = 25C 1 1ms 1 10ms 0.1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 0.1 1 TA = 25C TJ = 150C Single Pulse 10 A 100 1.4 VSD , Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFL014NPBF QG V DS VGS RG 10V RD 10V VG QGS QGD D.U.T. + - VDD Charge Pulse Width 1 s Duty Factor 0.1 % Fig 9a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. Fig 10a. Switching Time Test Circuit VDS 50K 12V .2F .3F 90% D.U.T. VGS 3mA + V - DS 10% VGS td(on) IG ID tr t d(off) tf Current Sampling Resistors Fig 9b. Gate Charge Test Circuit 1000 Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 P DM t 1 Notes: 1. Duty factor D = t 1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 1 1 /t 2 2. Peak TJ = PDM x Z thJA + T A A 1000 10 100 t 1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRFL014NPBF EAS , Single Pulse Avalanche Energy (mJ) 120 15V TOP 100 BOTTOM ID 1.5A 2.7A 3.4A VDS L DRIVER 80 RG 20V D.U.T IAS tp + V - DD 60 A 0.01 40 Fig 12a. Unclamped Inductive Test Circuit 20 0 VDD = 25V 25 50 75 100 125 A 150 V(BR)DSS tp Starting TJ , Junction Temperature (C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 12b. Unclamped Inductive Waveforms 6 www.irf.com IRFL014NPBF SOT-223 (TO-261AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-261AA) Part Marking Information HEXFET PRODUCT MARKING T HIS IS AN IRFL014 PART NUMBER INT ERNAT IONAL RECT IFIER LOGO LOT CODE AXXXX FL014 314P A = AS S EMBLY S ITE DAT E CODE CODE (YYWW) YY = YEAR WW = WEEK P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) T OP BOT T OM www.irf.com 7 IRFL014NPBF SOT-223 (TO-261AA) Tape & Reel Information Dimensions are shown in milimeters (inches) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010) TR 2.05 (.080) 1.95 (.077) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 1.60 (.062) 1.50 (.059) TYP. FEED DIRECTION 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 16.30 (.641) 15.70 (.619) 2.30 (.090) 2.10 (.083) NOTES : 1. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. 3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES. 13.20 (.519) 12.80 (.504) 15.40 (.607) 11.90 (.469) 4 330.00 (13.000) MAX. 50.00 (1.969) MIN. NOTES : 1. OUTLINE COMFORMS TO EIA-418-1. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 14.40 (.566) 12.40 (.488) 18.40 (.724) MAX. 4 3 Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 06/04 8 www.irf.com |
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